to-220 parameter l value unit drain-source voltage v dss 55 v drain current - continuous i d 49 a drain current - pulsed i dm 160 a gate-source voltage v gss 20 v power dissipation p d 94 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c IRFZ44N description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv dss v gs = 0v, i d =250 a 55 v zero gate voltage drain current i dss v ds =55v, v gs =0v 10 ua gate-body leakage current, forward i gssf v gs =20v, v ds =0v 100 na gate-body leakage current, reverse i gssr v gs = -20v, v ds =0v -100 na gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 3.0 4.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 25 a 0.0175 w drain-source diode forward voltage v sd v gs = 0 v, i s = 25 a 1.3 v n-channel power mosfet product specification process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated dc-dc converters for telecom and computer applications. it is also intended for any applications with low gate drive requirements. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
|
